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All results from a given calculation for SiC2 (Silicon dicarbide)

using model chemistry: CCSD(T)=FULL/aug-cc-pVDZ

19 10 17 12 22

States and conformations

State Conformation minimum conformation conformer description state description
1 1 yes C2V 1A1
Energy calculated at CCSD(T)=FULL/aug-cc-pVDZ
 hartrees
Energy at 0K-364.880459
Energy at 298.15K 
HF Energy-364.505065
Nuclear repulsion energy61.919021
The energy at 298.15K was derived from the energy at 0K and an integrated heat capacity that used the calculated vibrational frequencies.
Vibrational Frequencies calculated at CCSD(T)=FULL/aug-cc-pVDZ
Mode Number Symmetry Frequency
(cm-1)
Scaled Frequency
(cm-1)
IR Intensities
(km mol-1)
Raman Act
4/u)
Dep P Dep U
1 A1 1731 1681        
2 A1 770 748        
3 B2 170i 165i        

Unscaled Zero Point Vibrational Energy (zpe) 1165.2 cm-1
Scaled (by 0.9712) Zero Point Vibrational Energy (zpe) 1131.7 cm-1
See section III.C.1 List or set vibrational scaling factors to change the scale factors used here.
See section III.C.2 Calculate a vibrational scaling factor for a given set of molecules to determine the least squares best scaling factor.
Rotational Constants (cm-1) from geometry optimized at CCSD(T)=FULL/aug-cc-pVDZ
ABC
1.66176 0.41883 0.33452

See section I.F.4 to change rotational constant units
Geometric Data calculated at CCSD(T)=FULL/aug-cc-pVDZ

Point Group is C2v

Cartesians (Å)
Atom x (Å) y (Å) z (Å)
Si1 0.000 0.000 0.815
C2 0.000 0.650 -0.950
C3 0.000 -0.650 -0.950

Atom - Atom Distances (Å)
  Si1 C2 C3
Si11.88111.8811
C21.88111.3003
C31.88111.3003

picture of Silicon dicarbide state 1 conformation 1
More geometry information
Calculated Bond Angles
atom1 atom2 atom3 angle atom1 atom2 atom3 angle
C2 Si1 C3 40.440
Electronic energy levels
Charges, Dipole, Quadrupole and Polarizability