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All results from a given calculation for SiC2 (Silicon dicarbide)

using model chemistry: CCSD(T)/6-31G**

19 10 17 12 22

States and conformations

State Conformation minimum conformation conformer description state description
1 1 yes C2V 1A1
Energy calculated at CCSD(T)/6-31G**
 hartrees
Energy at 0K-364.829903
Energy at 298.15K 
HF Energy-364.476128
Nuclear repulsion energy62.981851
The energy at 298.15K was derived from the energy at 0K and an integrated heat capacity that used the calculated vibrational frequencies.
Vibrational Frequencies calculated at CCSD(T)/6-31G**
Mode Number Symmetry Frequency
(cm-1)
Scaled Frequency
(cm-1)
IR Intensities
(km mol-1)
Raman Act
4/u)
Dep P Dep U
1 A1 1779 1687        
2 A1 820 778        
3 B2 104 98        

Unscaled Zero Point Vibrational Energy (zpe) 1351.3 cm-1
Scaled (by 0.9485) Zero Point Vibrational Energy (zpe) 1281.7 cm-1
See section III.C.1 List or set vibrational scaling factors to change the scale factors used here.
See section III.C.2 Calculate a vibrational scaling factor for a given set of molecules to determine the least squares best scaling factor.
Rotational Constants (cm-1) from geometry optimized at CCSD(T)/6-31G**
ABC
1.69849 0.43592 0.34689

See section I.F.4 to change rotational constant units
Geometric Data calculated at CCSD(T)/6-31G**

Point Group is C2v

Cartesians (Å)
Atom x (Å) y (Å) z (Å)
Si1 0.000 0.000 0.799
C2 0.000 0.643 -0.932
C3 0.000 -0.643 -0.932

Atom - Atom Distances (Å)
  Si1 C2 C3
Si11.84581.8458
C21.84581.2861
C31.84581.2861

picture of Silicon dicarbide state 1 conformation 1
More geometry information
Calculated Bond Angles
atom1 atom2 atom3 angle atom1 atom2 atom3 angle
C2 Si1 C3 40.778
Electronic energy levels
Charges, Dipole, Quadrupole and Polarizability