return to home page Computational Chemistry Comparison and Benchmark DataBase Release 22 (May 2022) Standard Reference Database 101 National Institute of Standards and Technology
You are here: Home > Geometry > Calculated > Calculated geometry OR Calculated > Geometry > Calculated geometry

Geometry for SiC (silicon monocarbide) 3Σ C*V

1910171554
InChI=1S/CSi/c1-2 INChIKey=HBMJWWWQQXIZIP-UHFFFAOYSA-N

B2PLYP/6-31G*


Point group is C∞v
Atom Internal
x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.5125
C2 0.0000 0.0000 -1.1958
Atom - Atom Distances (Å)
  Si1 C2
Si1 1.7082
C2 1.7082
Maximum atom distance is 1.7082Å between atoms Si1 and C2.
picture of silicon monocarbide

For information on specific bond angles or dihedrals see the geometry comparison page in section Comparisons > Geometry > Bonds, angles.