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Geometry for SiC2 (Silicon dicarbide) 1A1 C2V

1910171554
InChI=1S/C2Si/c1-2-3-1 INChIKey=

PBEPBE/6-31G(2df,p)


Point group is C2v
Atom Internal Principal
x (Å) y (Å) z (Å)   a (Å) b (Å) c (Å)
Si1 0.0000 0.0000 0.8015   0.8015 0.0000 0.0000
C2 0.0000 0.6413 -0.9350   -0.9350 0.6413 0.0000
C3 0.0000 -0.6413 -0.9350   -0.9350 -0.6413 0.0000
Atom - Atom Distances (Å)
  Si1 C2 C3
Si1 1.8511 1.8511
C2 1.8511 1.2826
C3 1.8511 1.2826
Maximum atom distance is 1.8511Å between atoms Si1 and C2.
picture of Silicon dicarbide
Calculated Bond Angles (degrees) (Ignoring Hydrogens)
atom1 atom2 atom3 angle         atom1 atom2 atom3 angle
C2 Si1 C3 40.539

For information on specific bond angles or dihedrals see the geometry comparison page in section Comparisons > Geometry > Bonds, angles.