return to home page Computational Chemistry Comparison and Benchmark DataBase Release 22 (May 2022) Standard Reference Database 101 National Institute of Standards and Technology
You are here: Home > Geometry > Calculated > Calculated geometry OR Calculated > Geometry > Calculated geometry

Geometry for SiC (silicon monocarbide) 3Σ C*V

1910171554
InChI=1S/CSi/c1-2 INChIKey=HBMJWWWQQXIZIP-UHFFFAOYSA-N

HSEh1PBE/6-311G**


Point group is C∞v
Atom Internal
x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.5145
C2 0.0000 0.0000 -1.2005
Atom - Atom Distances (Å)
  Si1 C2
Si1 1.7150
C2 1.7150
Maximum atom distance is 1.7150Å between atoms Si1 and C2.
picture of silicon monocarbide

For information on specific bond angles or dihedrals see the geometry comparison page in section Comparisons > Geometry > Bonds, angles.