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Geometry for SiC2 (Silicon dicarbide) 1A1 C2V

1910171554
InChI=1S/C2Si/c1-2-3-1 INChIKey=

mPW1PW91/cc-pVTZ


Point group is C2v
Atom Internal Principal
x (Å) y (Å) z (Å)   a (Å) b (Å) c (Å)
Si1 0.0000 0.0000 0.7985   0.7985 0.0000 0.0000
C2 0.0000 0.6310 -0.9316   -0.9316 0.6310 0.0000
C3 0.0000 -0.6310 -0.9316   -0.9316 -0.6310 0.0000
Atom - Atom Distances (Å)
  Si1 C2 C3
Si1 1.8416 1.8416
C2 1.8416 1.2621
C3 1.8416 1.2621
Maximum atom distance is 1.8416Å between atoms Si1 and C2.
picture of Silicon dicarbide
Calculated Bond Angles (degrees) (Ignoring Hydrogens)
atom1 atom2 atom3 angle         atom1 atom2 atom3 angle
C2 Si1 C3 40.077

For information on specific bond angles or dihedrals see the geometry comparison page in section Comparisons > Geometry > Bonds, angles.