|
Computational Chemistry Comparison and Benchmark DataBase
Release 22 (May 2022) Standard Reference Database 101
National Institute of Standards and Technology
|
|
You are here: Home > Geometry > Calculated > Calculated geometry OR Calculated > Geometry > Calculated geometry
|
Geometry for SiC (silicon monocarbide)
3Σ C*V
1910171554
InChI=1S/CSi/c1-2 INChIKey=HBMJWWWQQXIZIP-UHFFFAOYSA-N
SVWN/cc-pVDZ
Point group is C∞v
Atom |
Internal |
x (Å) |
y (Å) |
z (Å) |
Si1 |
0.0000 |
0.0000 |
0.5199 |
C2 |
0.0000 |
0.0000 |
-1.2131 |
Atom - Atom Distances (Å)
|
Si1 |
C2 |
Si1 |
| 1.7330 |
C2 |
1.7330 |
|
Maximum atom distance is 1.7330Å
between atoms Si1 and C2.
For information on specific bond angles or dihedrals
see the geometry comparison page in section
Comparisons > Geometry > Bonds, angles.