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Experimental data for SiN (Silicon nitride)

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Other names
Silicon nitride; Silicon nitride (SiN);
INChI INChIKey SMILES IUPAC name
InChI=1S/NSi/c1-2 NCLWWTWAYQTPBU-UHFFFAOYSA-N [Si]#N
State Conformation
2Σ C*V
Enthalpy of formation (Hfg), Entropy, Integrated heat capacity (0 K to 298.15 K) (HH), Heat Capacity (Cp)
Property Value Uncertainty units Reference Comment
Hfg(298.15K) enthalpy of formation 403.67 36.00 kJ mol-1 Gurvich
Hfg(0K) enthalpy of formation 402.48 36.00 kJ mol-1 Gurvich
Entropy (298.15K) entropy 216.81   J K-1 mol-1 Gurvich
Integrated Heat Capacity (0 to 298.15K) integrated heat capacity 8.73   kJ mol-1 Gurvich
Heat Capacity (298.15K) heat capacity 30.25   J K-1 mol-1 Gurvich
Information can also be found for this species in the NIST Chemistry Webbook
Vibrational levels (cm-1) vibrations
Mode Number Symmetry Frequency Intensity Comment Description
Fundamental(cm-1) Harmonic(cm-1) Reference (km mol-1) unc. Reference
1 Σ 1138 1151 1979HUB/HER      

Detailed diatomic data
ωe ωexe ωeye Be αe ZPE reference
1151.284 6.455 -0.0069 0.730927 0.005685 574.1044 2007Iri:389

vibrational zero-point energy: 569.2 cm-1 (from fundamental vibrations)
Calculated vibrational frequencies for SiN (Silicon nitride).
More spectroscopic constants are available at the NIST Physics Laboratory website:
http://physics.nist.gov/PhysRefData/MolSpec/Diatomic/Html/Tables/SiN.html
Rotational Constants (cm-1) rotational constants
See section I.F.4 to change rotational constant units
A B C reference comment
  0.73110   1979HUB/HER

Calculated rotational constants for SiN (Silicon nitride).
Product of moments of inertia moments of inertia
23.0579amu Å2   3.828914E-39gm cm2
Geometric Data
picture of Silicon nitride

Point Group C∞v


Internal coordinates
distances (r) in Å, angles (a) in degrees, dihedrals (d) in degrees
Description Value unc. Connectivity Reference Comment
Atom 1 Atom 2 Atom 3 Atom 4
rSiN 1.575   1 2 NISTdiatomic r0

Cartesians
Atom x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.0000
N2 0.0000 0.0000 1.5719

Atom - Atom Distances bond lengths
Distances in Å
  Si1 N2
Si1   1.5719
N2 1.5719  

Calculated geometries for SiN (Silicon nitride).

Bond descriptions


Examples: C-C single bond, C=C, double bond, C#C triple bond, C:C aromatic bond
Bond Type Count
N-Si 1

Connectivity
Atom 1 Atom 2
Si1 N2
Electronic energy levels (cm-1)
Energy (cm-1) Degeneracy reference description
0 2 1979HUB/HER 2Σ
Dipole, Quadrupole and Polarizability
Electric dipole moment dipole
State Config State description Conf description Exp. min. Dipole (Debye) Reference comment Point Group Components
x y z total dipole quadrupole
1 1 2Σ C∞v True           C∞v 1 1
Experimental dipole measurement abbreviations: MW microwave; DT Dielectric with Temperature variation; DR Indirect (usually an upper limit); MB Molecular beam
Calculated electric dipole moments for SiN (Silicon nitride).
Electric quadrupole moment quadrupole
State Config State description Conf description Exp. min. Quadrupole (D Å) Reference comment Point Group Components
xx yy zz dipole quadrupole
1 1 2Σ C∞v True       C∞v 1 1

Calculated electric quadrupole moments for SiN (Silicon nitride).

References
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squib reference DOI
1979HUB/HER Huber, K.P.; Herzberg, G., Molecular Spectra and Molecular Structure. IV. Constants of Diatomic Molecules, Van Nostrand Reinhold Co., 1979 10.1007/978-1-4757-0961-2
2007Iri:389 KK Irikura "Experimental Vibrational Zero-Point Energies: Diatomic Molecules" J. Phys. Chem. Ref. Data 36(2), 389, 2007 10.1063/1.2436891
Gurvich Gurvich, L.V.; Veyts, I. V.; Alcock, C. B., Thermodynamic Properties of Individual Substances, Fouth Edition, Hemisphere Pub. Co., New York, 1989  
NISTdiatomic NIST Diatomic Spectral Database (www.physics.nist.gov/PhysRefData/MolSpec/Diatomic/index.html) 10.18434/T4T59X

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