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Experimental data for SiI4 (silicon tetraiodide)

22 02 02 11 45
Other names
Tetraiodosilane; Silane, tetraiodo-;
INChI INChIKey SMILES IUPAC name
InChI=1S/I4Si/c1-5(2,3)4 I[Si](I)(I)I
State Conformation
1A1 Td
Enthalpy of formation (Hfg), Entropy, Integrated heat capacity (0 K to 298.15 K) (HH), Heat Capacity (Cp)
Property Value Uncertainty units Reference Comment
Hfg(298.15K) enthalpy of formation -110.46   kJ mol-1 webbook
Hfg(0K) enthalpy of formation     kJ mol-1 webbook
Entropy (298.15K) entropy 416.43   J K-1 mol-1 webbook
Information can also be found for this species in the NIST Chemistry Webbook
Vibrational levels (cm-1) vibrations
Mode Number Symmetry Frequency Intensity Comment Description
Fundamental(cm-1) Harmonic(cm-1) Reference (km mol-1) unc. Reference
1 A1 168   webbook       sym stretch
2 E 63           deg. deform
3 T2 405           deg. stretch
4 T2 94           deg. deform

vibrational zero-point energy: 895.5 cm-1 (from fundamental vibrations)
Calculated vibrational frequencies for SiI4 (silicon tetraiodide).
Rotational Constants (cm-1) rotational constants
See section I.F.4 to change rotational constant units
A B C reference comment

Calculated rotational constants for SiI4 (silicon tetraiodide).
Product of moments of inertia moments of inertia
amu3Å6   0gm3 cm6
Geometric Data
picture of silicon tetraiodide

Point Group Td


Internal coordinates
distances (r) in Å, angles (a) in degrees, dihedrals (d) in degrees
Description Value unc. Connectivity Reference Comment
Atom 1 Atom 2 Atom 3 Atom 4
rSiI 2.432 0.005 1 2 1998Kol/Har:349-352 rg

Cartesians
Atom x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.0000
I2 1.4041 1.4041 1.4041
I3 -1.4041 -1.4041 1.4041
I4 -1.4041 1.4041 -1.4041
I5 1.4041 -1.4041 -1.4041

Atom - Atom Distances bond lengths
Distances in Å
  Si1 I2 I3 I4 I5
Si1   2.43202.43202.43202.4320
I2 2.4320   3.97143.97143.9714
I3 2.43203.9714   3.97143.9714
I4 2.43203.97143.9714   3.9714
I5 2.43203.97143.97143.9714  

Calculated geometries for SiI4 (silicon tetraiodide).

Experimental Bond Angles (degrees) from cartesians bond angles

atom1 atom2 atom3 angle         atom1 atom2 atom3 angle
I2 Si1 I3 109.471 I2 Si1 I4 109.471
I2 Si1 I5 109.471 I3 Si1 I4 109.471
I3 Si1 I5 109.471 I4 Si1 I5 109.471

Bond descriptions


Examples: C-C single bond, C=C, double bond, C#C triple bond, C:C aromatic bond
Bond Type Count
Si-I 4

Connectivity
Atom 1 Atom 2
Si1 I2
Si1 I3
Si1 I4
Si1 I5
Electronic energy levels (cm-1)
Energy (cm-1) Degeneracy reference description
Dipole, Quadrupole and Polarizability
Electric dipole moment dipole
State Config State description Conf description Exp. min. Dipole (Debye) Reference comment Point Group Components
x y z total dipole quadrupole
1 1 1A1 Td True           Td 0 0
Experimental dipole measurement abbreviations: MW microwave; DT Dielectric with Temperature variation; DR Indirect (usually an upper limit); MB Molecular beam
Calculated electric dipole moments for SiI4 (silicon tetraiodide).
Electric quadrupole moment quadrupole
State Config State description Conf description Exp. min. Quadrupole (D Å) Reference comment Point Group Components
xx yy zz dipole quadrupole
1 1 1A1 Td True       Td 0 0

Calculated electric quadrupole moments for SiI4 (silicon tetraiodide).

References
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squib reference DOI
1998Kol/Har:349-352 M Kolonits, M Hargittai "Molecular Structure of Silicon Tetraiodide" Structural Chemistry, 9(5), 1998, 349-352 10.1023/a:1022462926682
webbook NIST Chemistry Webbook (http://webbook.nist.gov/chemistry) 10.18434/T4D303

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