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Experimental data for Si(CH3)4 (tetramethylsilane)

22 02 02 11 45
Other names
tms; Silane, tetramethyl-; Silicon, tetramethyl-; Tetramethylsilicane; tetramethylsilane;
INChI INChIKey SMILES IUPAC name
InChI=1S/C4H12Si/c1-5(2,3)4/h1-4H3 CZDYPVPMEAXLPK-UHFFFAOYSA-N C[Si](C)(C)C tetramethylsilane
State Conformation
1A1 TD
Enthalpy of formation (Hfg), Entropy, Integrated heat capacity (0 K to 298.15 K) (HH), Heat Capacity (Cp)
Property Value Uncertainty units Reference Comment
Hfg(298.15K) enthalpy of formation -229.00 3.00 kJ mol-1 1998Rap/Ape
Hfg(0K) enthalpy of formation   3.00 kJ mol-1 1998Rap/Ape
Entropy (298.15K) entropy 361.12   J K-1 mol-1 webbook
Information can also be found for this species in the NIST Chemistry Webbook
Vibrational levels (cm-1) vibrations
Mode Number Symmetry Frequency Intensity Comment Description
Fundamental(cm-1) Harmonic(cm-1) Reference (km mol-1) unc. Reference

Calculated vibrational frequencies for Si(CH3)4 (tetramethylsilane).
Rotational Constants (cm-1) rotational constants
See section I.F.4 to change rotational constant units
A B C reference comment
0.10409 0.10409 0.10409   from coordinates

Calculated rotational constants for Si(CH3)4 (tetramethylsilane).
Product of moments of inertia moments of inertia
4248017amu3Å6   1.9451548609038E-113gm3 cm6
Geometric Data
picture of tetramethylsilane

Point Group Td


Internal coordinates
distances (r) in Å, angles (a) in degrees, dihedrals (d) in degrees
Description Value unc. Connectivity Reference Comment
Atom 1 Atom 2 Atom 3 Atom 4
rCH 1.115 7.000 2 6 1976Hellwege(II/7) ED
rSiC 1.875 0.002 1 2 1976Hellwege(II/7) ED
aHCH 109.8 6 2 7 1976Hellwege(II/7)
aHCSi 109.2 1 2 6 1976Hellwege(II/7) ED

Cartesians
Atom x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.0000
C2 1.0825 1.0825 1.0825
C3 -1.0825 -1.0825 1.0825
C4 -1.0825 1.0825 -1.0825
C5 1.0825 -1.0825 -1.0825
H6 1.7241 0.4345 1.7241
H7 1.7241 1.7241 0.4345
H8 0.4345 1.7241 1.7241
H9 -1.7241 -1.7241 0.4345
H10 -0.4345 -1.7241 1.7241
H11 -1.7241 -0.4345 1.7241
H12 -1.7241 0.4345 -1.7241
H13 -1.7241 1.7241 -0.4345
H14 -0.4345 1.7241 -1.7241
H15 1.7241 -1.7241 -0.4345
H16 0.4345 -1.7241 -1.7241
H17 1.7241 -0.4345 -1.7241

Atom - Atom Distances bond lengths
Distances in Å
  Si1 C2 C3 C4 C5 H6 H7 H8 H9 H10 H11 H12 H13 H14 H15 H16 H17
Si1   1.87501.87501.87501.87502.47672.47672.47672.47672.47672.47672.47672.47672.47672.47672.47672.4767
C2 1.8750   3.06193.06193.06191.11501.11501.11504.02183.25433.25434.02183.25433.25433.25434.02183.2543
C3 1.87503.0619   3.06193.06193.25434.02183.25431.11501.11501.11503.25433.25434.02183.25433.25434.0218
C4 1.87503.06193.0619   3.06194.02183.25433.25433.25434.02183.25431.11501.11501.11504.02183.25433.2543
C5 1.87503.06193.06193.0619   3.25433.25434.02183.25433.25434.02183.25434.02183.25431.11501.11501.1150
H6 2.47671.11503.25434.02183.2543   1.82381.82384.26773.05273.55604.87654.26774.26773.05274.26773.5560
H7 2.47671.11504.02183.25433.25431.8238   1.82384.87654.26774.26774.26773.55603.05273.55604.26773.0527
H8 2.47671.11503.25433.25434.02181.82381.8238   4.26773.55603.05274.26773.05273.55604.26774.87654.2677
H9 2.47674.02181.11503.25433.25434.26774.87654.2677   1.82381.82383.05273.55604.26773.55603.05274.2677
H10 2.47673.25431.11504.02183.25433.05274.26773.55601.8238   1.82384.26774.26774.87653.05273.55604.2677
H11 2.47673.25431.11503.25434.02183.55604.26773.05271.82381.8238   3.55603.05274.26774.26774.26774.8765
H12 2.47674.02183.25431.11503.25434.87654.26774.26773.05274.26773.5560   1.82381.82384.26773.05273.5560
H13 2.47673.25433.25431.11504.02184.26773.55603.05273.55604.26773.05271.8238   1.82384.87654.26774.2677
H14 2.47673.25434.02181.11503.25434.26773.05273.55604.26774.87654.26771.82381.8238   4.26773.55603.0527
H15 2.47673.25433.25434.02181.11503.05273.55604.26773.55603.05274.26774.26774.87654.2677   1.82381.8238
H16 2.47674.02183.25433.25431.11504.26774.26774.87653.05273.55604.26773.05274.26773.55601.8238   1.8238
H17 2.47673.25434.02183.25431.11503.55603.05274.26774.26774.26774.87653.55604.26773.05271.82381.8238  

Calculated geometries for Si(CH3)4 (tetramethylsilane).

Experimental Bond Angles (degrees) from cartesians bond angles

atom1 atom2 atom3 angle         atom1 atom2 atom3 angle
Si1 C2 H6 109.200 Si1 C2 H7 109.200
Si1 C2 H8 109.200 Si1 C3 H9 109.200
Si1 C3 H10 109.200 Si1 C3 H11 109.200
Si1 C4 H12 109.200 Si1 C4 H13 109.200
Si1 C4 H14 109.200 Si1 C5 H15 109.200
Si1 C5 H16 109.200 Si1 C5 H17 109.200
C2 Si1 C3 109.471 C2 Si1 C4 109.471
C2 Si1 C5 109.471 C3 Si1 C4 109.471
C3 Si1 C5 109.471 C4 Si1 C5 109.471
H6 C2 H7 109.741 H6 C2 H8 109.741
H7 C2 H8 109.741 H9 C3 H10 109.741
H9 C3 H11 109.741 H10 C3 H11 109.741
H12 C4 H13 109.741 H12 C4 H14 109.741
H13 C4 H14 109.741 H15 C5 H16 109.741
H15 C5 H17 109.741 H16 C5 H17 109.741

Bond descriptions


Examples: C-C single bond, C=C, double bond, C#C triple bond, C:C aromatic bond
Bond Type Count
C-Si 4
H-C 12

Connectivity
Atom 1 Atom 2
Si1 C2
Si1 C3
Si1 C4
Si1 C5
C2 H6
C2 H7
C2 H8
C3 H9
C3 H10
C3 H11
C4 H12
C4 H13
C4 H14
C5 H15
C5 H16
C5 H17
Electronic energy levels (cm-1)
Energy (cm-1) Degeneracy reference description
0 1   1A1

Ionization Energies (eV)
Ionization Energy I.E. unc. vertical I.E. v.I.E. unc. reference
9.800 0.040     webbook
Dipole, Quadrupole and Polarizability
Electric dipole moment dipole
State Config State description Conf description Exp. min. Dipole (Debye) Reference comment Point Group Components
x y z total dipole quadrupole
1 1 1A1 Td True 0.000 0.000 0.000 0.000   by symmetry Td 0 0
Experimental dipole measurement abbreviations: MW microwave; DT Dielectric with Temperature variation; DR Indirect (usually an upper limit); MB Molecular beam
Calculated electric dipole moments for Si(CH3)4 (tetramethylsilane).
Electric quadrupole moment quadrupole
State Config State description Conf description Exp. min. Quadrupole (D Å) Reference comment Point Group Components
xx yy zz dipole quadrupole
1 1 1A1 Td True 0.000 0.000 0.000   by symmetry Td 0 0

Calculated electric quadrupole moments for Si(CH3)4 (tetramethylsilane).

References
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squib reference DOI
1976Hellwege(II/7) Hellwege, KH and AM Hellwege (ed.). Landolt-Bornstein: Group II: Atomic and Molecular Physics Volume 7: Structure Data of Free Polyatomic Molecules. Springer-Verlag. Berlin. 1976.  
1998Rap/Ape Z Rappoprt, Y Apeloig, "The chemistry of organic silicon compounds Volume 2 Part 1" Chapter 4, Wiley 10.1021/ja985767u
webbook NIST Chemistry Webbook (http://webbook.nist.gov/chemistry) 10.18434/T4D303

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