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Listing of experimental geometry data for SiC2 (Silicon dicarbide)

Rotational Constants (cm-1)


See section I.F.4 to change rotational constant units
A B C
1.75575 0.43905 0.34847
Rotational Constants from 1988Bre/Dub:399-405
Calculated rotational constants for SiC2 (Silicon dicarbide).

Point Group C2v

Internal coordinates

(distances (r) in Å) (angles (a) in degrees) (dihedrals (d) in degrees)
Description Value Connectivity Reference Comment
Atom 1 Atom 2 Atom 3 Atom 4
rCC 1.265 2 3 1988Bre/Dub:399-405
rCSi 1.836 1 2 1988Bre/Dub:399-405
aCSiC 40.29 2 1 3 1988Bre/Dub:399-405
picture of Silicon dicarbide

Bond descriptions


Examples: C-C single bond, C=C, double bond, C#C triple bond, C:C aromatic bond
Bond Type Count
C-Si 2
C#C 1
Atom x (Å) y (Å) z (Å)
Si1 0.0000 0.0000 0.7956
C2 0.0000 0.6324 -0.9282
C3 0.0000 -0.6324 -0.9282

Atom - Atom Distances (Å)
  Si1 C2 C3
Si11.83621.8362
C21.83621.2648
C31.83621.2648

Calculated geometries for SiC2 (Silicon dicarbide).
References
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squib reference DOI
1988Bre/Dub:399-405 H Bredohl, I Dubois, H Leclercq, F Melen "Rotational Analysis of the 000-000 and 010-000 Bands of Sic2" J. MOL. SPECT. 128,399-405 (1988) 10.1016/0022-2852(88)90156-7

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